NSN Part 703672-1 by Manufacturer Bae Systems Information And Electronic Systems Integration Inc - Submit a Quote

Mfg Part Number: 703672-1	Alternate P/N: 7036721	NSN : 5962-01-293-9228
NIIN : 012939228	CAGE Code : 80249	Manufacturer: Bae Systems Information And Electronic Systems Integration Inc
Item Name : Microcircuit Memory	FSC : 5962 Microcircuits Electronic

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The part 703672-1 with NSN 5962-01-293-9228 that we feature by the manufacturer Bae Systems Information And Electronic Systems Integration Inc are paired alongside CAGE Code 80249 is available and readt to ship. Aircraft Parts Supplier carries a variety of NSN products, allowing us to be the go-to supplier for countless businesses. If you are familiar with the NSN associated with the item you are in search of, we invite you to take advantage of it. Similarly, other information regarding the NSN items you wish to purchase is equally as helpful, so please provide such details in the provided RFQ form below. When you fill out a form, in return, you will be provided a competitive quote for your comparisons in just 15 minutes or less.

NSN Information for Part Number 703672-1 with NSN 5962-01-293-9228, 5962012939228

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-293-9228 Item Description: Microcircuit Memory	5962	012939228	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
703672-1	2	1	5

Characteristics Data of NSN 5962-01-293-9228, 5962012939228

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH1 040 INCHES MINIMUM AND 1 500 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 480 INCHES MINIMUM AND 0 630 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 070 INCHES MINIMUM AND 0 350 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING525 0 MILLIWATTS
MEMORY	AFGA	OPERATING TEMP RANGE0 070 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDWENABLE AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMMETAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN13 INPUT
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC300 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 300 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	CZZZ	MEMORY CAPACITYUNKNOWN
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT