NSN Part 331233-2 by Manufacturer Bae Systems Information And Electronic Systems Integration Inc - Submit a Quote

Mfg Part Number: 331233-2	Alternate P/N: 3312332	NSN : 5962-01-185-9617
NIIN : 011859617	CAGE Code : 80249	Manufacturer: Bae Systems Information And Electronic Systems Integration Inc
Item Name : Microcircuit Memory	FSC : 5962 Microcircuits Electronic

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The part 331233-2 with NSN 5962-01-185-9617 that we feature by the manufacturer Bae Systems Information And Electronic Systems Integration Inc are paired alongside CAGE Code 80249 is available and readt to ship. Aircraft Parts Supplier carries a variety of NSN products, allowing us to be the go-to supplier for countless businesses. If you are familiar with the NSN associated with the item you are in search of, we invite you to take advantage of it. Similarly, other information regarding the NSN items you wish to purchase is equally as helpful, so please provide such details in the provided RFQ form below. When you fill out a form, in return, you will be provided a competitive quote for your comparisons in just 15 minutes or less.

NSN Information for Part Number 331233-2 with NSN 5962-01-185-9617, 5962011859617

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-185-9617 Item Description: Microcircuit Memory	5962	011859617	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
331233-2	2	2	3

Characteristics Data of NSN 5962-01-185-9617, 5962011859617

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH1 290 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 210 INCHES NOMINAL
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 02 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	AGAV	END ITEM IDENTIFICATIONRADAR SYSTEM ANFPS-117
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE AND SCHOTTKY
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC AND GLASS
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN14 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC100 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 100 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	CZZZ	MEMORY CAPACITYUNKNOWN
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT